Samir Chaudhry
32Patents
13h-index
30Co-inventors
81Inventor score
Filing activity: Jun 9, 1997 → Mar 16, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7033877B2 | Vertical replacement-gate junction field-effect transistor | Electricity | 70 | Expired |
| US6906962B2 | Method for defining the initial state of static random access memory | Physics | 35 | Expired |
| US6759730B2 | Bipolar junction transistor compatible with vertical replacement gate transistor | Electricity | 34 | Expired |
| US6639298B2 | Multi-layer inductor formed in a semiconductor substrate | Electricity | 33 | Expired |
| US6207510A | Method for making an integrated circuit including high and low voltage transistors | Electricity | 31 | Expired |
| US6686604B2 | Multiple operating voltage vertical replacement-gate (VRG) transistor | Emerging Cross-Sectional Technologies | 29 | Expired |
| US6690040B2 | Vertical replacement-gate junction field-effect transistor | Electricity | 28 | Expired |
| US6001701A | Process for making bipolar having graded or modulated collector | Emerging Cross-Sectional Technologies | 18 | Expired |
| US6738294B2 | Electronic fingerprinting of semiconductor integrated circuits | Electricity | 17 | Expired |
| US6576521B1 | Method of forming semiconductor device with LDD structure | Electricity | 15 | Expired |
| US7132297B2 | Multi-layer inductor formed in a semiconductor substrate and having a core of ferromagnetic material | Electricity | 15 | Expired |
| US7700432B2 | Method of fabricating a vertical transistor and capacitor | Electricity | 14 | Active |
| US6359317B1 | Vertical PNP bipolar transistor and its method of fabrication | Electricity | 14 | Expired |
| US6204186A | Method of making integrated circuit capacitor including tapered plug | Electricity | 12 | Expired |
| US7056783B2 | Multiple operating voltage vertical replacement-gate (VRG) transistor | Emerging Cross-Sectional Technologies | 9 | Expired |
| US7242056B2 | Structure and fabrication method for capacitors integratible with vertical replacement gate transistors | Electricity | 9 | Expired |
| US6828561B2 | Apparatus and method for detecting alpha particles | Physics | 8 | Expired |
| US6709904B2 | Vertical replacement-gate silicon-on-insulator transistor | Electricity | 6 | Expired |
| US6249016A | Integrated circuit capacitor including tapered plug | Electricity | 6 | Expired |
| US6667536B2 | Thin film multi-layer high Q transformer formed in a semiconductor substrate | Emerging Cross-Sectional Technologies | 5 | Expired |
| US10325833B1 | Bent polysilicon gate structure for small footprint radio frequency (RF) switch | Electricity | 4 | Active |
| US7078280B2 | Vertical replacement-gate silicon-on-insulator transistor | Electricity | 4 | Expired |
| US7259048B2 | Vertical replacement-gate silicon-on-insulator transistor | Electricity | 4 | Expired |
| US7049199B2 | Method of ion implantation for achieving desired dopant concentration | Electricity | 3 | Expired |
| US7151059B2 | MOS transistor and method of manufacture | Electricity | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.