H:SiOC coated substrates
US6667553B2 · kind B2 · utility
37Cited by
78References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2001 |
| Grant date | Dec 23, 2003 |
| Priority date | — |
| Expiry date | Nov 21, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention pertains to a method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant and a light transmittance of 95% or more for light with a wavelength in the range of 400 nm to 800 nm. The method comprises reacting a methyl-containing silane in a controlled oxygen environment using plasma enhanced or ozone assisted chemical vapor deposition to produce the films. Because of the transmittance the resulting films are useful in the formation of display devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.