Magnetic memory and method of bi-directional write current programming
US6667899B1 · kind B1 · utility
15Cited by
7References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2003 |
| Grant date | Dec 23, 2003 |
| Priority date | — |
| Expiry date | Mar 27, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/15
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory (400) is programmed by selectively conducting current in opposite directions in both word and bit lines to reduce electromigration effects in word lines and bit lines. Various criteria, such as a data value being programmed and a previous current direction are used to determine the direction of the write currents used in the word and bit lines during programming.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.