Thomas Andre
76Patents
13h-index
28Co-inventors
84Inventor score
Filing activity: Jun 28, 2002 → Mar 20, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6700814B1 | Sense amplifier bias circuit for a memory having at least two distinct resistance states | Physics | 208 | Expired |
| US6600690B1 | Sense amplifier for a memory having at least two distinct resistance states | Physics | 45 | Expired |
| US6909631B2 | MRAM and methods for reading the MRAM | Physics | 30 | Expired |
| US6657889B1 | Memory having write current ramp rate control | Physics | 23 | Expired |
| US6711068B2 | Balanced load memory and method of operation | Physics | 20 | Expired |
| US6621729B1 | Sense amplifier incorporating a symmetric midpoint reference | Physics | 18 | Expired |
| US8923041B2 | Self-referenced sense amplifier for spin torque MRAM | Physics | 18 | Active |
| US6760266B2 | Sense amplifier and method for performing a read operation in a MRAM | Physics | 17 | Expired |
| US9697880B2 | Self-referenced read with offset current in a memory | Physics | 17 | Active |
| US6903964B2 | MRAM architecture with electrically isolated read and write circuitry | Physics | 15 | Expired |
| US6667899B1 | Magnetic memory and method of bi-directional write current programming | Physics | 15 | Expired |
| US6744663B2 | Circuit and method for reading a toggle memory cell | Physics | 14 | Expired |
| US8228715B2 | Structures and methods for a field-reset spin-torque MRAM | Physics | 13 | Active |
| US6711052B2 | Memory having a precharge circuit and method therefor | Physics | 13 | Expired |
| US6538940B1 | Method and circuitry for identifying weak bits in an MRAM | Physics | 11 | Expired |
| US6693824B2 | Circuit and method of writing a toggle memory | Physics | 11 | Expired |
| US6888743B2 | MRAM architecture | Physics | 10 | Expired |
| US9412786B1 | Magnetoresistive device design and process integration with surrounding circuitry | Electricity | 10 | Active |
| US8817530B2 | Data-masked analog and digital read for resistive memories | Physics | 10 | Active |
| US9047969B2 | Method of writing to a spin torque magnetic random access memory | Physics | 10 | Active |
| US7224630B2 | Antifuse circuit | Physics | 10 | Expired |
| US8811071B2 | Method of writing to a spin torque magnetic random access memory | Physics | 9 | Active |
| US9218865B2 | Self-referenced sense amplifier for spin torque MRAM | Physics | 9 | Active |
| US7532533B2 | Antifuse circuit and method for selectively programming thereof | Physics | 9 | Active |
| US6714440B2 | Memory architecture with write circuitry and method therefor | Physics | 9 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.