Apparatus and method for fabricating semiconductor device
US6669812B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 1, 1998 |
| Grant date | Dec 30, 2003 |
| Priority date | — |
| Expiry date | Mar 5, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0225
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention provides various measures for preventing particles from being deposited on objects being processed during plasma processing. An electrode is disposed inside a reaction chamber, which is kept in a vacuum state by a turbo molecule pump and a dry pump that are provided for a main exhaust pipe. A substrate is placed on the electrode, a gas is introduced into the reaction chamber and then a voltage is applied from an RF power supply to the electrode and the substrate, thereby generating plasma regions in the reaction chamber. A large number of exhaust pipes, each having an opening, are disposed on substantially the same plane as the plane on which the interface between a plasma glow region and a plasma sheath is located. These multiple openings surround the interface between the plasma glow region and the plasma sheath.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.