Nanoporous dielectric films with graded density and process for making such films
US6670022B1 · kind B1 · utility
9Cited by
9References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 3, 2000 |
| Grant date | Dec 30, 2003 |
| Priority date | — |
| Expiry date | May 25, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/249969
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to nanoporous dielectric films and to a process for their manufacture. A substrate having a plurality of raised lines on its surface is provided with a relatively high porosity, low dielectric constant, silicon containing polymer composition positioned between the raised lines and a relatively low porosity, high dielectric constant, silicon containing composition positioned on the lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.