Backside protection films

US6670283B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Faye D. Baker · Burlington, US
• Casey J. Grant · South Burlington, US
• Mousa H. Ishaq · South Burlington, US
• Joel M. Sharrow · South Hero, US
• James D. Weil · Underhill, US

Key dates

• Filing date: Nov 20, 2001
• Grant date: Dec 30, 2003
• Expiry date: Nov 20, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02274
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Disclosed is a method of fabricating a semiconductor device, comprising: (a) providing a bare semiconductor substrate, the substrate having a frontside and a backside; (b) forming one or more protective films on the backside of the substrate; and (c) performing one or more wafer fabrication steps. Some or all the protective films may be removed and the method repeated multiple times during fabrication of the semiconductor device.