InP collector InGaAsSb base DHBT device and method of forming same
US6670653B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 1999 |
| Grant date | Dec 30, 2003 |
| Priority date | — |
| Expiry date | Jul 30, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
Abstract
A Double Heterojunction Bipolar Transistor (DHBT) is disclosed employing a collector of InP, an emitter of InP or other material such as InAlAs, and a base of either a selected InxGa1−xAsySb1−y compound, which preferably is lattice-matched to InP or may be somewhat compressively strained thereto, or of a superlattice which mimics the selected InGaAsSb compound. When an emitter having a conduction band non-aligned with that of the base is used, such as InAlAs, the base-emitter junction is preferably graded using either continuous or stepped changes in bulk material, or using a chirped superlattice. Doping of the junction may include one or more delta doping layer to improve the shift of conduction band discontinuities provided by a grading layer, or to permit a wider depletion region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.