Integrated polysilicon fuse and diode
US6670824B2 · kind B2 · utility
23Cited by
4References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2002 |
| Grant date | Dec 30, 2003 |
| Priority date | — |
| Expiry date | Mar 20, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An integrated polysilicon fuse and diode and methods of making the same are provided. The integrated polysilicon fuse and diode combination may be implemented in a programmable cross point fuse array. The integrated polysilicon fuse and diode may be used in a random access memory (RAM) cell. The polysilicon diode may be isolated from a substrate and other devices, use less area on a substrate, and cost less to manufacture compared to other diodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.