John Stanback
17Patents
10h-index
36Co-inventors
72Inventor score
Filing activity: Jul 2, 1991 → Nov 16, 2012
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5159353A | Thermal inkjet printhead structure and method for making the same | Emerging Cross-Sectional Technologies | 74 | Expired |
| US5635966A | Edge feed ink delivery thermal inkjet printhead structure and method of fabrication | Performing Operations; Transporting | 56 | Expired |
| US7208783B2 | Optical enhancement of integrated circuit photodetectors | Electricity | 39 | Expired |
| US7214926B2 | Imaging systems and methods | Physics | 30 | Expired |
| US6765276B2 | Bottom antireflection coating color filter process for fabricating solid state image sensors | Electricity | 30 | Expired |
| US7283164B2 | Method for detecting and correcting defective pixels in a digital image sensor | Electricity | 28 | Expired |
| US7115924B1 | Pixel with asymmetric transfer gate channel doping | Electricity | 25 | Expired |
| US6670824B2 | Integrated polysilicon fuse and diode | Electricity | 23 | Expired |
| US7483065B2 | Multi-lens imaging systems and methods using optical filters having mosaic patterns | Electricity | 14 | Active |
| US7460688B2 | System and method for detecting and correcting defective pixels in a digital image sensor | Electricity | 11 | Active |
| US6967073B2 | Bottom antireflection coating color filter process for fabricating solid state image sensors | Electricity | 6 | Expired |
| US7557397B2 | Pixel with asymmetric transfer gate channel doping | Electricity | 4 | Active |
| US7834383B2 | Pixel with asymmetric transfer gate channel doping | Electricity | 0 | Active |
| US8901606B2 | Pseudomorphic high electron mobility transistor (pHEMT) comprising low temperature buffer layer | Electricity | 0 | Active |
| US7704780B2 | Optical enhancement of integrated circuit photodetectors | Electricity | 0 | Active |
| US7459733B2 | Optical enhancement of integrated circuit photodetectors | Electricity | 0 | Active |
| US8853743B2 | Pseudomorphic high electron mobility transistor comprising doped low temperature buffer layer | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.