Plasma processing apparatus
US6673196B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 31, 2000 |
| Grant date | Jan 6, 2004 |
| Priority date | — |
| Expiry date | Jun 25, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32743
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention provides a plasma processing apparatus, comprising a chamber for applying a film depositing treatment or an etching treatment to a target object by utilizing plasma, and a gate liner covering the surface of the open portion of a chamber gate for transferring the target object into and out of the chamber so as to prevent the chamber gate from being affected by the plasma. A gate aspect ratio, which is a ratio of the depth of the open portion of the chamber gate to the length in the short-side direction, is determined in accordance with the anode/cathode ratio, which is a ratio in area of the anode region to the cathode region within the chamber, so as to prevent an abnormal discharge within the gate space.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.