Method of reducing process plasma damage using optical spectroscopy
US6673200B1 · kind B1 · utility
82Cited by
3References
17Claims
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Key dates
| Filing date | Jul 12, 2002 |
| Grant date | Jan 6, 2004 |
| Priority date | — |
| Expiry date | Jul 12, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T156/1734
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Optical emission spectra from a test wafer during a plasma process are measured using a spectrometer. The plasma charging voltage retained by (detected by) the test wafer is measured after the process step is completed. The emission spectra are correlated with the plasma charging voltage to identify the species contributing to the plasma charging voltage. The optical emission spectra are monitored in real time to optimize the plasma process to prevent plasma charging damage. The optical emission spectra are also monitored to control the plasma process drift.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.