Peter McGrath
11Patents
7h-index
18Co-inventors
59Inventor score
Filing activity: Nov 30, 2001 → Aug 20, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6673200B1 | Method of reducing process plasma damage using optical spectroscopy | Emerging Cross-Sectional Technologies | 82 | Expired |
| US6972840B1 | Method of reducing process plasma damage using optical spectroscopy | Emerging Cross-Sectional Technologies | 76 | Expired |
| US6743669B1 | Method of reducing leakage using Si3N4 or SiON block dielectric films | Electricity | 17 | Expired |
| US6551901B1 | Method for preventing borderless contact to well leakage | Electricity | 11 | Expired |
| US6893937B1 | Method for preventing borderless contact to well leakage | Electricity | 11 | Expired |
| US6794304B1 | Method and apparatus for reducing microtrenching for borderless vias created in a dual damascene process | Electricity | 9 | Expired |
| US9029215B2 | Method of making an insulated gate semiconductor device having a shield electrode structure | Electricity | 7 | Active |
| US7098515B1 | Semiconductor chip with borderless contact that avoids well leakage | Electricity | 6 | Expired |
| US7538040B2 | Techniques for precision pattern transfer of carbon nanotubes from photo mask to wafers | Emerging Cross-Sectional Technologies | 2 | Expired |
| US7911034B2 | Techniques for precision pattern transfer of carbon nanotubes from photo mask to wafers | Emerging Cross-Sectional Technologies | 1 | Active |
| US11049956B2 | Method of forming a semiconductor device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.