Crystal-growth substrate and a ZnO-containing compound semiconductor device
US6673478B2 · kind B2 · utility
24Cited by
6References
20Claims
0Family size
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Key dates
| Filing date | Sep 27, 2002 |
| Grant date | Jan 6, 2004 |
| Priority date | — |
| Expiry date | Sep 27, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of growing a ZnO-containing compound semiconductor single crystal, on a compound single crystal layer of a hexagonal crystal structure having a plurality of (0001) surfaces aligned in a sequence of terraces along a direction of a-axis, a ZnO-containing compound single crystal of a hexagonal crystal structure is grown, having an inclination from the c-axis toward the direction of the a-axis.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.