Patent · US Expired

Pattern formation method and method and apparatus for production of a semiconductor device using said method

US6673526B1 · kind B1 · utility

4Cited by
15References
7Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 23, 1995
Grant dateJan 6, 2004
Priority date
Expiry dateAug 23, 2015

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F7/70283
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A pattern formation method and method and apparatus for production of a semiconductor device using that method which irradiate light from a light source to a phase shifting mask through a fly's-eye lens comprised of an assembly of a plurality of lenses, transfer the pattern of the phase shifting mask onto the substrate, and form the pattern on the substrate, wherein the amount of light made incident upon the center portion of the fly's-eye lens is lowered by 2 to 90 percent, preferably 10 to 90 percent, further preferably 20 to 80 percent or 20 to 60 percent, relative to the amount of light incident upon the peripheral portion of the fly's-eye lens.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.