Sti pull-down to control SiGe facet growth

US6674102B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Douglas D. Coolbaugh · Highland, US
• Mark D. Dupuis · South Burlington, US
• Matthew D. Gallagher · Burlington, US
• Peter J. Geiss · Underhill, US
• Brett A. Philips · Saint Albans, US

Key dates

• Filing date: Jan 25, 2001
• Grant date: Jan 6, 2004
• Expiry date: Jan 25, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D10/891

Abstract

A SiGe bipolar transistor including a semiconductor substrate having a collector and sub-collector region formed therein, wherein the collector and sub-collector are formed between isolation regions that are also present in the substrate is provided. Each isolation region includes a recessed surface and a non-recessed surface which are formed utilizing lithography and etching. A SiGe layer is formed on the substrate as well as the recessed non-recessed surfaces of each isolation region, the SiGe layer includes polycrystalline Si regions and a SiGe base region. A patterned insulator layer is formed on the SiGe base region; and an emitter is formed on the patterned insulator layer and in contact with the SiGe base region through an emitter window opening.