Mark D. Dupuis
6Patents
2h-index
14Co-inventors
40Inventor score
Filing activity: Jan 25, 2001 → Jun 22, 2009
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6936509B2 | STI pull-down to control SiGe facet growth | Electricity | 12 | Expired |
| US8482101B2 | Bipolar transistor structure and method including emitter-base interface impurity | Electricity | 6 | Active |
| US7118995B2 | Yield improvement in silicon-germanium epitaxial growth | Electricity | 1 | Expired |
| US6674102B2 | Sti pull-down to control SiGe facet growth | Electricity | 1 | Expired |
| US7843039B2 | Stress-modified device structures, methods of fabricating such stress-modified device structures, and design structures for an integrated circuit | Electricity | 1 | Active |
| US7413967B2 | Yield improvement in silicon-germanium epitaxial growth | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.