Method of forming a semiconductor device and structure therefor
US6674305B1 · kind B1 · utility
1Cited by
14References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 8, 2002 |
| Grant date | Jan 6, 2004 |
| Priority date | — |
| Expiry date | Jul 8, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/00315
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A method of forming an output transistor (11) protects the output transistor (11) from overvoltage conditions on an output (13). The body of the output transistor (11) is coupled to the gate of the transistor (11) prior to the high voltage being applied to the output (13).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.