High voltage transistors with graded extension
US6677210B1 · kind B1 · utility
26Cited by
5References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 28, 2002 |
| Grant date | Jan 13, 2004 |
| Priority date | — |
| Expiry date | Feb 28, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
High voltage transistors with high breakdown voltages are provided. These high voltage transistors are formed with graded drain extension regions. The concentration of charge carriers increases farther away from the gate across each drain extension region, causing severe electric fields to be moved away from the gate. Methods and structures of the present invention may be used to increase a transistor's breakdown voltage to the theoretical limit of the device. High voltage transistors with graded extension regions may be p-channel or n-channel MOSFETs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.