Method for eliminating polysilicon residue
US6677211B2 · kind B2 · utility
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4References
8Claims
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Key dates
| Filing date | Jan 14, 2002 |
| Grant date | Jan 13, 2004 |
| Priority date | — |
| Expiry date | May 16, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32155
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for eliminating polysilicon residue is provided by converting the polysilicon residue into silicon nitride in two steps. A tilted ion implantation step is performed to implant nitrogen ions into the polysilicon residue to rich nitrogen containing of the polysilicon residue. A nitrogen anneal step is subsequently performed to completely convert the rich nitrogen containing polysilicon residue into silicon nitride that can eliminate the conductivity of the polysilicon residue and prevent conventional oxygen encroachment occurring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.