Methods for manufacturing integrated circuit metal-insulator-metal capacitors including hemispherical grain lumps
US6677217B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2002 |
| Grant date | Jan 13, 2004 |
| Priority date | — |
| Expiry date | Jun 26, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
The effective area of a MIM capacitor is increased by forming a lower electrode that includes hemispherical grain lumps. The hemispherical grain lumps are formed by heat-treating a metal layer in an oxygen and/or nitrogen atmosphere, thus oxidizing the surface of the metal layer or growing the crystal grains of the metal layer. The MIM capacitor may be formed of Pt, Ru, Rh, Os, Ir, or Pd, and the hemispherical grain lumps may be formed of Pt, Ru, Rh, Os, Ir, or Pd. Since the metal layer is primarily heat-treated during the formation of the lower electrode, it is possible to reduce the degree to which the surface morphology of the lower electrode is rapidly changed due to a heat treatment subsequent to forming a dielectric layer and an upper electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.