Method for manufacturing breakaway layers for detaching deposited layer systems

US6677249B2 · kind B2 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Franz Laermer · Stuttgart, DE
• Wilhelm Frey · Palo Alto, US
• Hans Artmann · Magstadt, DE

Key dates

• Filing date: Jan 27, 1999
• Grant date: Jan 13, 2004
• Expiry date: Jan 27, 2019

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S117/915
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for removing layers or layer systems from a substrate and subsequent application onto an alternative substrate. A porous breakaway layer is formed by anodization in hydrofluoric acid. Optionally, a stabilizing layer with lower porosity is previously produced on top of the breakaway layer. The oxide of the porous breakaway layer or the stabilizing layer is removed by brief contact with HF, and an epitaxial layer is applied on the porous breakaway layer or the stabilizing layer. The epitaxial layer or the layer system is then removed from the substrate, and the epitaxial layer or the layer system is applied onto an alternative substrate. Optionally, the stabilizing layer and/or residues of the breakaway layer are removed from the epitaxial layer.