CVD apparatuses and methods of forming a layer over a semiconductor substrate
US6677250B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2001 |
| Grant date | Jan 13, 2004 |
| Priority date | — |
| Expiry date | Jul 26, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02263
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention includes a method of forming a layer on a semiconductor substrate that is provided within a reaction chamber. The chamber has at least two inlet ports that terminate in openings. A first material is flowed into the reaction chamber through the opening of a first of the inlet ports. At least a portion of the first material is deposited onto the substrate. The reaction chamber is purged by flowing an inert material into the reaction chamber through the opening of a second of the inlet ports. The inert material passes from the opening and through a distribution head that is positioned within the reaction chamber between the first and second openings. A second material can then be flowed into the chamber through an opening in a third inlet port and deposited onto the substrate. The invention also includes a chemical vapor deposition apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.