Method for forming a hydrophilic surface on low-k dielectric insulating layers for improved adhesion
US6677251B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2002 |
| Grant date | Jan 13, 2004 |
| Priority date | — |
| Expiry date | Jul 29, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76814
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a dielectric insulating layer with increased hydrophilicity for improving adhesion of an adjacently deposited material layer in semiconductor device manufacturing including providing a semiconductor wafer having a process surface for forming a dielectric insulting layer thereover; depositing the dielectric insulating layer; and, subjecting the dielectric insulating layer including an exposed surface to a hydrophilicity increasing treatment including at least one of a dry plasma treatment and a wet process including contacting the exposed surface with a hydrophilicity increasing solution including a surfactant said wet process followed by a baking process to improve an adhesion of an adjacently deposited material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.