Carbon doped oxide deposition
US6677253B2 · kind B2 · utility
14Cited by
21References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 5, 2001 |
| Grant date | Jan 13, 2004 |
| Priority date | — |
| Expiry date | Oct 13, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for carbon doped oxide (CDO) deposition is described. One method of deposition includes providing a substrate and introducing oxygen to a carbon doped oxide precursor in the presence of the substrate. A carbon doped oxide film is formed on the substrate. In another method the substrate is placed on a susceptor of a chemical vapor deposition apparatus. A background gas is introduced along with the carbon doped oxide precursor and oxygen to form the carbon doped oxide film on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.