Semiconductor device having insulated gate bipolar transistor with dielectric isolation structure
US6677622B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 6, 2002 |
| Grant date | Jan 13, 2004 |
| Priority date | — |
| Expiry date | Apr 3, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/421
Abstract
A semiconductor substrate is of first-conductivity-type and has a principal surface. A first semiconductor region and a second semiconductor region are of second-conductivity-type and formed apart from each other in the principal surface of the semiconductor substrate. A third semiconductor region is of second-conductivity-type and formed on the first semiconductor region. The third semiconductor region has an impurity concentration higher than that of the first semiconductor region. A fourth semiconductor region is of first-conductivity-type and formed on the third semiconductor region. A first main electrode is formed on the fourth semiconductor region. A second main electrode is formed on the second semiconductor region. A gate electrode is formed, at least on the first semiconductor region and on the principal surface of the semiconductor substrate between the fourth semiconductor region and the second semiconductor region, with a gate insulating film therebetween.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.