Memory cell with tight coupling

US6677640B1 · kind B1 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Sukesh Sandhu · Boise, US
• Dan Gealy · Kuna, US
• Gurtej S. Sandhu · Boise, US

Key dates

• Filing date: Mar 1, 2000
• Grant date: Jan 13, 2004
• Expiry date: Mar 1, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/685

Abstract

A dielectric sandwich for use in a memory device is disclosed. The dielectric sandwich is thin and has at least one high permittivity layer having a thickness of between 140 and 240 angstroms. The dielectric sandwich also has at least one oxide layer formed at a temperature above the crystallization temperature of the high permittivity layer. In a flash memory cell the dielectric sandwich is located between the control gate and the floating gate and provides tight coupling between the control gate and the floating gate.