Damascene structure using a sacrificial conductive layer
US6677678B2 · kind B2 · utility
79Cited by
12References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 15, 2002 |
| Grant date | Jan 13, 2004 |
| Priority date | — |
| Expiry date | Jul 15, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a damascene structure, and the structure so formed, using a sacrificial conductive layer to provide a uniform focus plane for the photolithography tool during formation of circuit features. In particular, a metal layer is provided between the insulative layer and the photoresist, upon which the capacitive sensors of the photolithography tool focus during the formation of the circuit features, namely, troughs and vias.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.