Method of hot switching a plasma tuner
US6677828B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2000 |
| Grant date | Jan 13, 2004 |
| Priority date | — |
| Expiry date | Aug 23, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32183
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present hot switching method and impedance matching circuit extends the tuning range of matching circuits to include increased power levels. The hot switching method and circuit includes coupling a controlled impedance network between an RF generator output and a plasma chamber input for matching impedances. The controlled impedance network includes an RF switch for switching a predetermined impedance. A device performance characteristic of the RF switch is determined. RF power is applied from the RF generator through the controlled impedance network to the plasma chamber. A signal characteristic of the impedance match is measured. The RF switch is controlled based upon the measured signal characteristic such that the impedance match is driven towards a predetermined matching range. The RF switch is switched any speed based upon the device performance characteristic.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.