Exchange coupling film and electroresistive sensor using the same
US6678128B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 11, 2001 |
| Grant date | Jan 13, 2004 |
| Priority date | — |
| Expiry date | Jan 18, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1171
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An exchange coupling film has an antiferromagnetic layer, a pinned magnetic layer, and a seed layer provided on the side of the antiferromagnetic layer 4 opposite to the pinned magnetic layer. The seed layer has a crystalline structure constituted mainly by face-centered cubic crystals with (111) planes substantially aligned. The seed layer is preferably non-magnetic. A laminate structure including the antiferromagnetic layer and a free layer inclusive of the intervening layers have crystalline orientations with their (111) planes substantially aligned, so that large crystal grains and, hence, large ratio of resistance variation can be achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.