Pseudo differential sensing method and apparatus for DRAM cell
US6678198B2 · kind B2 · utility
15Cited by
6References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 3, 2001 |
| Grant date | Jan 13, 2004 |
| Priority date | — |
| Expiry date | Mar 2, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/4099
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Present invention describes an efficient implementation of differential sensing in single ended DRAM arrays. According to one embodiment of the present invention, a respective local sense amplifier compares the accessed memory cell data with a dummy cell data in the opposite or adjacent block of the accessed block that is connected to a respective local bit line in the opposite block, amplifies the result of the comparison and puts the data on a global bit line. In one embodiment, the invention is process and temperature invariant using reference method and means for canceling cross coupling between read lines and write lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.