Patent · US Expired

Method for patterning high density field emitter tips

US6679998B2 · kind B2 · utility

10Cited by
12References
47Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 23, 2002
Grant dateJan 20, 2004
Priority date
Expiry dateAug 23, 2022

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J9/025
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A method of forming a pattern in a layer of material on a substrate, comprising providing a plurality of spheres, covering the layer on the substrate with the plurality of spheres to form a mask, reducing the diameter of at least one sphere of the plurality of spheres, etching the layer on the substrate using at least one sphere having a reduced diameter as a mask, and etching the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.