Si-rich surface layer capped diffusion barriers
US6680249B2 · kind B2 · utility
8Cited by
14References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2002 |
| Grant date | Jan 20, 2004 |
| Priority date | — |
| Expiry date | Jun 28, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76807
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A copper interconnect having a transition metal-nitride barrier (106) with a thin metal-silicon-nitride cap (108). A transition metal-nitride barrier (106) is formed over the structure. Then the barrier (106) is annealed in a Si-containing ambient to form a silicon-rich capping layer (108) at the surface of the barrier (106). The copper (110) is then deposited over the silicon-rich capping layer (108) with good adhesion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.