Methods of chemical vapor depositing ruthenium by varying chemical vapor deposition parameters
US6680251B2 · kind B2 · utility
10Cited by
19References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2002 |
| Grant date | Jan 20, 2004 |
| Priority date | — |
| Expiry date | Feb 21, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A layer is formed by chemical vapor depositing a seeding layer of ruthenium oxide on a substrate at a chemical vapor deposition flow rate ratio of a ruthenium source to oxygen gas. A main layer of ruthenium is chemical vapor deposited on the seeding layer by increasing the chemical vapor deposition flow rate ratio of the ruthenium source to the oxygen gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.