Method of making a semiconductor device by converting a hydrophobic surface of a dielectric layer to a hydrophilic surface
US6680262B2 · kind B2 · utility
8Cited by
10References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2001 |
| Grant date | Jan 20, 2004 |
| Priority date | — |
| Expiry date | May 30, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76826
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of converting a hydrophobic surface of a dielectric layer to a hydrophilic surface is described. That method comprises forming a dielectric layer on a substrate, then operating a PECVD reactor to generate a plasma that converts the surface of that layer from a hydrophobic surface to a hydrophilic surface. Also described is a method for making a semiconductor device that employs this technique.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.