Semiconductor device and process for producing the same
US6680541B2 · kind B2 · utility
9Cited by
12References
8Claims
0Family size
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Key dates
| Filing date | Jan 18, 2002 |
| Grant date | Jan 20, 2004 |
| Priority date | — |
| Expiry date | Apr 13, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An intermetal insulating film containing at least silicon atoms, oxygen atoms and carbon atoms with the number ratio of oxygen atom to silicon atom being 1.5 or more and the number ratio of carbon atom to silicon atom being 1 to 2, and having a film thickness shrinkage at a time of oxidation of 14% or less is very low in dielectric constant, high in selectivity against resist etching and can be used without using a silicon oxide protective film in a semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.