Damascene structure having a metal-oxide-metal capacitor associated therewith
US6680542B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 18, 2000 |
| Grant date | Jan 20, 2004 |
| Priority date | — |
| Expiry date | May 18, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a semiconductor device, including an interconnect and a capacitor, and a method of fabrication therefor. The method includes forming a damascene interconnect structure through an interlevel dielectric layer and a dielectric etch stop layer located under the interlevel dielectric, wherein the damascene interconnect structure contacts a first interconnect structure. The method further includes forming a metal-oxide-metal (MOM) capacitor damascene structure through the interlevel dielectric layer and terminating on the dielectric etch stop layer. The damascene structures, may in an alternative embodiment, be dual damascene structures. Furthermore, the damascene interconnect structure and the MOM capacitor may, in another embodiment, make up part of a larger integrated circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.