Vertical-cavity surface emitting laser utilizing a reversed biased diode for improved current confinement
US6680963B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 24, 2001 |
| Grant date | Jan 20, 2004 |
| Priority date | — |
| Expiry date | Jul 24, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2059
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A current confinement element that can be used in constructing light-emitting devices. The current confinement element includes a top layer and an aperture-defining layer. The top layer includes a top semiconducting material of a first conductivity type that is transparent to light. The aperture-defining layer includes an aperture region and a confinement region. The aperture region includes an aperture semiconducting material of the first conductivity type that is transparent to light. The confinement region surrounds the aperture region and includes a material that has been doped to provide a high resistance to the flow of current. In one embodiment of the invention, the confinement region includes a semiconducting material of a second conductivity type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.