Chihping Kuo
10Patents
8h-index
17Co-inventors
65Inventor score
Filing activity: Dec 18, 1989 → Mar 30, 2005
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5233204A | Light-emitting diode with a thick transparent layer | Electricity | 173 | Expired |
| US5008718A | Light-emitting diode with an electrically conductive window | Electricity | 89 | Expired |
| US6194742A | Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices | Electricity | 76 | Expired |
| US6274399A | Method of strain engineering and impurity control in III-V nitride semiconductor films and optoelectronic devices | Electricity | 67 | Expired |
| US6914272B2 | Formation of Ohmic contacts in III-nitride light emitting devices | Electricity | 28 | Expired |
| US6657300B2 | Formation of ohmic contacts in III-nitride light emitting devices | Electricity | 27 | Expired |
| US6534331B2 | Method for making a vertical-cavity surface emitting laser with improved current confinement | Electricity | 9 | Expired |
| US6680963B2 | Vertical-cavity surface emitting laser utilizing a reversed biased diode for improved current confinement | Electricity | 8 | Expired |
| US7345323B2 | Formation of Ohmic contacts in III-nitride light emitting devices | Electricity | 7 | Expired |
| US6553053B2 | Vertical cavity surface emitting laser having improved light output function | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.