Pressure monitoring system for chemical-mechanical polishing
US6682399B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 17, 2000 |
| Grant date | Jan 27, 2004 |
| Priority date | — |
| Expiry date | Nov 19, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG05D16/2026
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A pressure monitoring system arranged in a close loop circuit, intended to facilitate chemical mechanical polishing (CMP), is disclosed. The pressure monitoring circuit includes an air regulator, a pressure transducer, a pressure difference transducer and a pressure difference regulator. This hardware is equipped to facilitate finding three control parameters of the monitoring system—polishing pressure (Pp), pressure difference of the polishing pressure and a corresponding wafer pressure (Dp), and deviation of the output pressure difference from a set point pressure difference (Cp). By monitoring Pp, Dp and Cp, air streams in a CMP process can be effectively regulated on a real time basis and the troubleshooting procedure for the system hardware can be practically reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.