Magnetron sputter source
US6682637B2 · kind B2 · utility
4Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2002 |
| Grant date | Jan 27, 2004 |
| Priority date | — |
| Expiry date | Jun 4, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3408
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
To optimize the yield of sputtered-off material as well as the service life of the target on a magnetron source, in which simultaneously good attainable distribution values of the layer on the substrate, stable over the entire target service life, a concave sputter face 20 in a configuration with small target-substrate distance d is combined with a magnet system to form the magnetron electron trap in which the outer pole 3 of the magnetron electron trap is disposed stationarily and an eccentrically disposed inner pole 4 with a second outer pole part 11 is developed rotatable about the central source axis 6.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.