Disposable hard mask for phase shift photomask plasma etching
US6682861B2 · kind B2 · utility
7Cited by
13References
45Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 19, 2003 |
| Grant date | Jan 27, 2004 |
| Priority date | — |
| Expiry date | Feb 19, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/094
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for creating a phase shift photomask which includes a layer of hard mask material, the inclusion of which improves the uniformity of critical dimensions on the photomask by minimizing the affect of macro and micro loading. The method for producing the phase shift photomask of the instant invention includes two etching processes. The first etching process etches the layer of hard mask, and the second etching process etches opaque material (and anti-reflective layer, if used) and phase shift layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.