Semiconductive substrate processing methods and methods of processing a semiconductive substrate
US6682873B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2002 |
| Grant date | Jan 27, 2004 |
| Priority date | — |
| Expiry date | Sep 23, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/15
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention includes structures, lithographic mask forming solutions, mask forming methods, field emission display emitter mask forming methods, and methods of forming plural field emission display emitters. One aspect of the present invention provides a mask forming method including forming a masking layer over a surface of a substrate; screen printing plural masking particles over a surface of the masking layer; and removing at least portions of the masking layer using the masking particles as a mask. Another aspect of the present invention provides a method of forming plural field emission display emitters. This method includes forming a masking layer over an emitter substrate; screen printing a plurality of masking particles over the masking layer; removing portions of the masking layer intermediate the screen printed masking particles to form a plurality of masking elements; removing the masking particles from the masking elements; and removing portions of the emitter substrate to form plural emitters.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.