Method for manufacturing a semiconductor device whereby degradation of surface morphology of a metal layer from thermal oxidation is suppressed
US6683001B2 · kind B2 · utility
1Cited by
8References
22Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 19, 2002 |
| Grant date | Jan 27, 2004 |
| Priority date | — |
| Expiry date | Mar 19, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/696
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device having a metal layer is provided in which variation of surface morphology resulting from thermal oxidation is suppressed. The metal layer is pretreated at a first temperature so that an upper surface of the metal layer is changed into a mixed phase of metal and oxygen and becomes substantially resistant to further oxidation during a subsequent heating at a higher temperature in an oxygen atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.