Eun-Ae Chung
23Patents
6h-index
55Co-inventors
68Inventor score
Filing activity: May 9, 2001 → Jun 29, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6815221B2 | Method for manufacturing capacitor of semiconductor memory device controlling thermal budget | Electricity | 13 | Expired |
| US9564435B2 | Semiconductor device including FinFETs having different gate structures and method of manufacturing the semiconductor device | Electricity | 11 | Active |
| US9368589B2 | Semiconductor device and semiconductor module | Electricity | 8 | Active |
| US7655519B2 | Methods of fabricating metal-insulator-metal capacitors with a chemical barrier layer in a lower electrode | Electricity | 8 | Expired |
| US7514315B2 | Methods of forming capacitor structures having aluminum oxide diffusion barriers | Electricity | 6 | Active |
| US7312130B2 | Methods of forming capacitor structures including L-shaped cavities | Electricity | 6 | Expired |
| US7759718B2 | Method manufacturing capacitor dielectric | Electricity | 5 | Active |
| US6858529B2 | Methods of forming contact plugs including polysilicon doped with an impurity having a lesser diffusion coefficient than phosphorus | Electricity | 4 | Expired |
| US7153750B2 | Methods of forming capacitors of semiconductor devices including silicon-germanium and metallic electrodes | Electricity | 3 | Expired |
| US7838438B2 | Dielectric layer, method of manufacturing the dielectric layer and method of manufacturing capacitor using the same | Electricity | 3 | Active |
| US7791125B2 | Semiconductor devices having dielectric layers and methods of forming the same | Electricity | 3 | Active |
| US8119486B2 | Methods of manufacturing semiconductor devices having a recessed-channel | Electricity | 2 | Active |
| US7750385B2 | Semiconductor interconnection structures and capacitors including poly-SiGe layers and metal contact plugs | Electricity | 2 | Active |
| US6472319B2 | Method for manufacturing capacitor of semiconductor memory device by two-step thermal treatment | Electricity | 1 | Expired |
| US6683001B2 | Method for manufacturing a semiconductor device whereby degradation of surface morphology of a metal layer from thermal oxidation is suppressed | Electricity | 1 | Expired |
| US9443735B2 | Method of manufacturing semiconductor device | Electricity | 1 | Active |
| US7176533B2 | Semiconductor devices having contact plugs including polysilicon doped with an impurity having a lesser diffusion coefficient than phosphorus | Electricity | 1 | Expired |
| US8110473B2 | Semiconductor device comprising multilayer dielectric film and related method | Electricity | 1 | Active |
| US7485585B2 | Method of forming a thin film, method of manufacturing a gate structure using the same and method of manufacturing a capacitor using the same | Electricity | 1 | Active |
| US6927166B2 | Method for manufacturing semiconductor devices and integrated circuit capacitors whereby degradation of surface morphology of a metal layer from thermal oxidation is suppressed | Electricity | 1 | Expired |
| US7939872B2 | Multi-dielectric films for semiconductor devices and methods of fabricating multi-dielectric films | Electricity | 1 | Active |
| US6953741B2 | Methods of fabricating contacts for semiconductor devices utilizing a pre-flow process | Electricity | 0 | Expired |
| US7824501B2 | In-situ method of cleaning vaporizer during dielectric layer deposition process | Chemistry; Metallurgy | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.