Array foreshortening measurement using a critical dimension scanning electron microscope
US6683306B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 11, 2001 |
| Grant date | Jan 27, 2004 |
| Priority date | — |
| Expiry date | Feb 9, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2814
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method and system for measuring lithographic image foreshortening. The method comprises the steps of providing a critical dimension scanning electron microscope, and using that critical dimension scanning electron microscope to measure lithographic image foreshortening. Preferably, a defined feature is formed using a lithographic process, and the critical dimension scanning electron microscope is used to measure foreshortening of that feature. For example, the feature may be a line, and the critical dimension scanning electron microscope may be used to measure foreshortening of the line. Also, the feature may be two arrays of lines, and the critical dimension scanning electron microscope may be used to measure the separation distance between the arrays. That separation distance may be used to determine a focus of the lithographic process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.