Fabrication of electronic circuit elements using unpatterned semiconductor layers

US6683333B2 · kind B2 · utility

Assignee

• E Ink Holdings Inc. · TW

Inventors

• Peter T. Kazlas · Sudbury, US
• Michael Hack · Sabre City, US
• Paul S. Drzaic · Olivehurst, US
• Guy M. Danner · Somerville, US
• Karl R. Amundson · Cambridge, US

Key dates

• Filing date: Jul 12, 2001
• Grant date: Jan 27, 2004
• Expiry date: Jul 12, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/0321

Abstract

A thin-film transistor array comprises at least first and second transistors. Each of the first and second transistors include a shared silicon layer, i.e., an active layer. The shared semiconductor layer extends continuously between the first and second transistors, and includes a concentration of dopant that increases a resistivity of the semiconductor layer and reduces a leakage current through the semiconductor layer while permitting functioning of the transistor array.