Structure and method for transverse field enhancement
US6683338B2 · kind B2 · utility
2Cited by
9References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 19, 2002 |
| Grant date | Jan 27, 2004 |
| Priority date | — |
| Expiry date | Sep 19, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/15
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Structures and methods for making a magnetic structure are discussed. Various embodiments increase a magnetic field to unambiguously select a magnetic memory cell structure. One method includes folding a current line into two portions around a magnetic memory cell structure. Each portion contributes its magnetic flux to increase the magnetic field to unambiguously select the magnetic memory cell structure. Another method increases the flux density by reducing a cross-sectional area of a portion of the current line, wherein the portion of the current line is adjacent to the to the magnetic memory cell structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.