Thin-film opto-electronic device and a method of making it

US6683367B1 · kind B1 · utility

Assignee

• IMEC VZW · BE

Inventors

• Lieven Stalmans · Lommel, BE
• Jef Poortmans · Kessel-Lo, BE
• Matty Caymax · Leuven, BE
• Khalid Said · Leuven, BE
• Johan Nijs · Holsbeek, BE

Key dates

• Filing date: Apr 9, 2001
• Grant date: Jan 27, 2004
• Expiry date: Apr 9, 2021

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

The present invention is related to a thin-film opto-electronic device and a method of fabricating the same. Particularly this thin film opto-electronic device is fabricated on a Si-containing substrate. The thin-film material is a crystalline semiconductor material. In order to increase the efficiency of this device a porous silicon layer is applied between the thin-film and the substrate. This porous silicon layer has both light reflecting and light diffusing properties thereby giving rise to light confinement in the thin-film.