Methods of forming binary noncrystalline oxide analogs of silicon dioxide
US6686264B2 · kind B2 · utility
2Cited by
5References
19Claims
0Family size
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Key dates
| Filing date | Jan 13, 2003 |
| Grant date | Feb 3, 2004 |
| Priority date | — |
| Expiry date | Jan 13, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/684
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A non-crystalline oxide is represented by the formula:ABO4wherein A is an element selected from Group IIIA of the periodic table; and B is an element selected from Group VB of the periodic table.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.